Epi-Poly Etch Stop for Out of Plane Spacer Defined Electrode

ABSTRACT

In one embodiment, a method of forming an out-of-plane electrode includes forming an oxide layer above an upper surface of a device layer, etching an etch stop perimeter defining trench extending through the oxide layer, forming a first cap layer portion on an upper surface of the oxide layer and within the etch stop perimeter defining trench, etching a first electrode perimeter defining trench extending through the first cap layer portion and stopping at the oxide layer, depositing a first material portion within the first electrode perimeter defining trench, depositing a second cap layer portion above the deposited first material portion, and vapor releasing a portion of the oxide layer with the etch stop portion providing a lateral etch stop.

This application claims the benefit of U.S. Provisional Application No.61/787,376 filed Mar. 15, 2013, the entirety of which is incorporatedherein by reference.

TECHNICAL FIELD

This disclosure relates to wafers and substrates such as are used inmicromechanical electrical system (MEMS) devices or semiconductordevices.

BACKGROUND

Electrostatic MEMS resonators have been a promising technologicalcandidate to replace conventional quartz crystal resonators due to thepotential for smaller size, lower power consumption and low-cost siliconmanufacturing. Such devices typically suffer, however, from unacceptablylarge motional-impedance (R_(x)). MEMS devices operating in theout-of-plane direction, i.e., a direction perpendicular to the planedefined by the substrate on which the device is formed, have theadvantage of large transduction areas on the top and bottom surfaces,resulting in a reduction in motional-impedances. Consequently, out-ofplane devices have received an increasing amount of attention resultingin significant advances in areas such as digital micro-mirror devicesand interference modulators.

The potential benefit of out-of-plane electrodes is apparent uponconsideration of the factors which influence the R_(x) The equationwhich describes R_(x) is as follows:

${R_{x} = \frac{c_{r}}{\eta^{2}}};$ with$\eta = {{V\frac{\partial C}{\partial g}} = \frac{ɛ_{0}{AV}}{g^{2}}}$

wherein “c_(r)” is the effective damping constant of the resonator,

“η” is the transduction efficiency,

“g” is the gap between electrodes,

“A” is the transduction area, and

“V” is the bias voltage.

For in-plane devices, “A” is defined as H×L, with “H” being the heightof the in-plane component and “L” being the length of the in-planecomponent. Thus, η is a function of H/g and H/g is constrained by theetching aspect ratio which is typically limited to about 20:1. Forout-of-plane devices, however, “A” is defined as L×W, with “W” being thewidth of the device. Accordingly, η is not a function of the height ofthe out-of-plane device. Rather, η is a function of (L×W)/g.Accordingly, the desired footprint of the device is the major factor intransduction efficiency. Out-of-plane devices thus have the capabilityof achieving significantly greater transduction efficiency compared toin-plane devices.

Traditionally, out-of-plane electrodes are not fully utilized because ofthe difficulty in reliably fabricating such devices. For example,packaging is difficult for out-of-plane devices because out-of-planeelectrodes are easily damaged during packaging processes. MEMSresonators incorporating an out-of-plane electrode are particularlychallenging because such devices require a vacuum encapsulation process.

What is needed therefore is a simple and reliable device with anout-of-plane electrode and method for producing the device. A deviceincorporating an out-of-plane electrode that is easily fabricated withan encapsulated vacuum would be further beneficial.

SUMMARY

In one embodiment, a method of forming an out-of-plane electrodeincludes forming an oxide layer above an upper surface of a devicelayer, etching an etch stop perimeter defining trench extending throughthe oxide layer, forming a first cap layer portion on an upper surfaceof the oxide layer and within the etch stop perimeter defining trench,etching a first electrode perimeter defining trench extending throughthe first cap layer portion and stopping at the oxide layer, depositinga first material portion within the first electrode perimeter definingtrench, depositing a second cap layer portion above the deposited firstmaterial portion, and vapor releasing a portion of the oxide layer withthe etch stop portion providing a lateral etch stop.

In a further embodiment, a device with an out-of-plane electrodeincludes a device layer positioned above a handle layer, a firstelectrode defined within the device layer, a cap layer having a firstcap layer portion spaced apart from an upper surface of the device layerby a gap, and having an etch stop perimeter defining portion defining alateral edge of the gap, and an out-of-plane electrode defined withinthe first cap layer portion by a spacer.

In yet another embodiment a method of forming an out-of-plane electrodeincludes providing an oxide layer above an upper surface of a devicelayer, etching an etch stop defining trench extending through the oxidelayer, epitaxially depositing a first cap layer portion above an uppersurface of the oxide layer and an etch stop cap layer portion within theetch stop defining trench, etching a first electrode perimeter definingtrench extending through the first cap layer portion and stopping at theoxide layer, depositing a first insulating material portion within thefirst electrode perimeter defining trench, and performing an HF vaporetch release on a portion of the oxide layer with the etch stop caplayer portion providing a lateral etch stop.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 depicts a side cross-sectional view of a sensor deviceincorporating a spacer defining an out-of-plane electrode, the spacerincluding two trench portions and a gasket portion in accordance withprinciples of the invention;

FIG. 2 depicts a side cross-sectional view of a wafer with a devicelayer etched to define an in-plane-electrode;

FIG. 3 depicts a top plan view of the wafer of FIG. 2;

FIG. 4 depicts the wafer of FIG. 2 with the trenches filled with anoxide material and an oxide layer formed above the device layer;

FIG. 5 depicts a top plan view of the wafer of FIG. 4;

FIG. 6 depicts the wafer of FIG. 4 with an opening etched in the oxidelayer above a contact portion of the device layer and an additionalopening created for an etch stop ring;

FIG. 7 depicts a top plan view of the wafer of FIG. 6;

FIG. 8 depicts the wafer of FIG. 6 with a first cap layer portion formedabove the oxide layer and trenches formed in the oxide layer;

FIG. 9 depicts a top plan view of the wafer of FIG. 8;

FIG. 10 depicts the wafer of FIG. 8 with the trenches filled with aninsulating material, the insulating material also forming a layer abovethe first cap layer portion, and an etch stop layer formed above theinsulating layer;

FIG. 11 depicts a top plan view of the wafer of FIG. 10;

FIG. 12 depicts the wafer of FIG. 10 after the insulating layer and etchstop layer have been etched to define gaskets for an out-of-planeelectrode and a device layer contact;

FIG. 13 depicts a top plan view of the wafer of FIG. 12;

FIG. 14 depicts the wafer of FIG. 12 after a second cap layer portionhas been deposited above the first cap layer portion and the gaskets,and the second cap layer portion has been planarized;

FIG. 15 depicts a top plan view of the wafer of FIG. 14;

FIG. 16 depicts the wafer of FIG. 14 after vapor etch vent holes havebeen etched through the first cap layer portion and the second cap layerportion, and a portion of the oxide layer, the oxide material in thedevice layer, and a portion of a buried oxide layer have been etched,thereby electrically isolating an in-plane electrode and releasing thefirst cap layer portion above the in-plane electrode;

FIG. 17 depicts a top plan view of the wafer of FIG. 16;

FIG. 18 depicts the wafer of FIG. 16 after the vapor etch vent holeshave been sealed by a third cap layer portion;

FIG. 19 depicts a top plan view of the wafer of FIG. 18;

FIG. 20 depicts the wafer of FIG. 18 with trenches formed through thethird cap layer portion and the second cap layer portion to uppersurfaces of the gaskets;

FIG. 21 depicts a top plan view of the wafer of FIG. 20;

FIG. 22 depicts the wafer of FIG. 20 with an insulating materialdeposited within the trenches and along the upper surface of the thirdcap layer portion, and a contact opening etched through the insulatingmaterial to expose a contact portion of the cap layer;

FIG. 23 depicts a top plan view of the wafer of FIG. 22;

FIG. 24 depicts a side cross-sectional view of a wafer includingelectrode defining trenches extending through a cap layer portion to anoxide layer and etch stop trenches extending through the cap layerportion and the oxide layer to an upper surface of a device layer;

FIG. 25 depicts a side cross-sectional view of the wafer of FIG. 24 withnitride trench portions filling the electrode defining trenches, nitrideetch stop portions filling the etch stop trenches, gaskets formed abovethe nitride trench portions and the nitride etch stop portions, and etchvent holes extending through a cap layer, wherein etching of the oxidelayer has been constrained by the nitride etch stop portions;

FIGS. 26-38 depict side cross-sectional views of a wafer as it isprocessed to provide an electrical contact on the upper surface of thedevice which extends to the handle layer of the device, while beingisolated from the device layer and the cap layer, wherein etching of anoxide layer between the device layer and the cap layer has beenconstrained by nitride etch stop portions;

FIG. 39 depicts a side cross-sectional view of a MEMS device with aproof mass which may be fabricated using substantially the same processdescribed with respect to FIGS. 26-38, the device including twoelectrically isolated contacts in the device layer on opposite sides ofthe proof mass and optionally including an out-of-plane electrode;

FIG. 40 depicts a side cross-sectional view of a MEMS device with aproof mass which may be fabricated using substantially the same processdescribed with respect to FIGS. 26-38, with an optional out-of-planeelectrode and two electrically isolated contacts in the device layer onopposite sides of the proof mass, wherein etching of a buried oxidelayer between the device layer and the handle layer has been constrainedby nitride etch stop portions; and

FIGS. 41-62 depict side cross-sectional views of a wafer as it isprocessed to form the device of FIG. 40.

DESCRIPTION

For the purposes of promoting an understanding of the principles of theinvention, reference will now be made to the embodiments illustrated inthe drawings and described in the following written specification. It isunderstood that no limitation to the scope of the invention is therebyintended. It is further understood that the present invention includesany alterations and modifications to the illustrated embodiments andincludes further applications of the principles of the invention aswould normally occur to one skilled in the art to which this inventionpertains.

FIG. 1 depicts a pressure sensor 100 including a handle layer 102, aburied oxide layer 104, and a device layer 106. An oxide layer 108separates the device layer 106 from a cap layer 110. A passive layer 112is located above the cap layer 110.

Within the device layer 106, an in-plane electrode 114 is defined by twoetch portions 116 and 118. The in-plane electrode 114 is isolated fromthe cap layer 110 by an etched portion 120 of the oxide layer 108. Theetched portions 116, 118, and 120 are etched through vent holes 122which are closed by the cap layer 110.

An out-of plane electrode 124 is located above the in-plane electrode114 and electrically isolated from the in-plane electrode 114 by theetched portion 120. The out-of-plane electrode 124 is isolated from therest of the cap layer 110 by two spacers 126 and 128. The spacers 126and 128 include a lower nitride portion 130 which extends upwardly fromthe etched portion 120, and an upper oxide portion 132 which extendsfrom the nitride portion 130 to the upper surface of the cap layer 110.

Spacers 134 and 136, which are formed like the spacers 126 and 128,electrically isolate a connector 138 in the cap layer 110 from the restof the cap layer 110. The connector 138 is in electrical communicationwith a connector 140 in the device layer 106. The connector 140 is inelectrical communication with the in-plane electrode 114, as describedmore fully below, and isolated from the remainder of the device layer106 by isolation posts 142 and 144. The isolation posts 142 and 144extend from the buried oxide layer 104 to the oxide layer 108. A bondpad or trace 146 is located above the passive layer 112 and inelectrical communication with the connector 138.

A process for forming a sensor such as the pressure sensor 100 isdiscussed with reference to FIGS. 2-23. Referring initially to FIGS. 2and 3, an SOI wafer 200 including a handle layer 202, a buried oxidelayer 204, and a device layer 206 is initially etched to define anin-plane electrode 208 and a lower contact portion 210 for thein-plane-electrode 208. A connector 212 is etched between the in-planeelectrode 208 and the lower contact portion 210. The in-plane electrode208 is defined by a trench portion 214, while the lower contact portion210 is defined by a trench portion 216 and the connector 212 is definedby a trench portion 218. If desired, the structural or handle layer 202may be a pressure chemical vapor deposition (LPCVD) or epi-polysiliconlayer.

The trench portions 214, 216, and 218 are then filled with a trenchoxide portion 220 as shown in FIGS. 4 and 5 using a conformal oxidedeposition. Oxide deposition further results in an oxide layer 222 onthe upper surface of the device layer 206. The thickness of the oxidelayer 222 sets the gap between two electrodes as discussed more fullybelow. The oxide layer 222 may be planarized by any desired techniquesuch as chemical mechanical polishing (CMP).

Referring to FIGS. 6 and 7, a contact opening 224 is then etched throughthe oxide layer 222 to expose the upper surface of the lower contactportion 210. An etch stop ring opening 225 is also etched through theoxide layer 222 to expose the upper surface of the device layer 206. Anepi-poly deposition fills the contact opening 224 with a lower middlecontact portion 226 of epi-poly while depositing a lower cap layerportion 228 above the oxide layer 222 as shown in FIGS. 8 and 9. Theepi-poly deposition further fills the etch stop ring opening 225 to forma etch stop ring portion 227 in the oxide layer 222 which is contiguouswith the lower cap layer portion 228. The lower middle contact portion226 thus extends from the upper surface of the lower contact portion 210to the upper surface of the lower cap layer portion 228. In analternative embodiment, the lower cap layer portion 228 may be a singlecrystal silicon formed using a fusion bonding process followed bygrinding/polishing or SmartCut technology to remove the bulk of thebonded wafer. In this alternative embodiment, electrical contacts mustbe formed after fusion. In a further embodiment, a polished polysilicondevice layer may be used.

FIGS. 8 and 9 further show trenches 230 and 232 which may be etchedafter CMP of the lower cap layer portion 228. The trench 230 extendsfrom the upper surface of the lower cap layer portion 228 to the uppersurface of the oxide layer 222 to define the lower middle contactportion 226. The trench 232 includes a trench portion 234 that defines alower out-of-plane electrode portion 236, a trench portion 238 thatdefines a connector 240, and a trench portion 242 that defines a lowercontact portion 244 for the lower out-of-plane electrode portion 236.

A low stress nitride is then used to fill the trenches 230 and 232 withtrench nitride portions 250 and 252 while a low stress nitride layer 254is deposited on the upper surface of the lower cap layer portion 228 asshown in FIGS. 10 and 11. A thin oxide layer 256 is provided on theupper surface of the low stress nitride layer 254. The thin oxide layer256 and the nitride layer 254 are then patterned and etched resulting inthe configuration of FIGS. 12 and 13. In FIGS. 12 and 13, a remainder258 of the oxide layer 256 and a remainder 260 of the nitride layer 254form a gasket 262 for an out-of plane electrode described more fullybelow. A remainder 264 of the oxide layer 256 and a remainder 266 of thenitride layer 254 form a gasket 268 for a contact the in-plane-electrode208. The lateral extent of the gaskets 262 and 268 when viewed incross-section may be selected to provide the desired isolationcharacteristics for the components defined thereby.

A thin epi-poly deposition layer 270 is then formed on the upper surfaceof the lower cap portion 228 and the upper surface of the gaskets 262and 268 to form a middle cap layer portion 272 (see FIGS. 14 and 15).The epi-poly deposition layer may be deposited in the manner describedby Candler et al., “Long-Term and Accelerated Life Testing of a NovelSingle-Wafer Vacuum Encapsulation for MEMS Resonators”, Journal ofMicroelectricalmechanical Systems, vol. 15, no. 6, December 2006. Themiddle cap layer portion 272 may be planarized if desired.

Referring to FIGS. 16 and 17, after vent holes 274 are formed, an HFvapor etch release is performed which releases the middle cap layerportion 272 from the in-plane-electrode 208. The etched portion of theoxide layer 222 between the upper surface of the in-plane-electrode 208and the lower surface of the middle cap layer portion 272 thus sets thegap between the in-plane-electrode 208 and the lower surface of whatwill be the out-of-plane electrode. The etch stop ring portion 227serves as a lateral etch stop, controlling the lateral dimension. Aclean high temperature seal is then performed in an epi reactor to sealthe vent holes 274. Alternatively, the vent holes 274 may be sealedusing oxide, nitride, silicon migration, etc. The resultingconfiguration is shown in FIGS. 18 and 19 wherein a layer portion 276 isformed above the middle cap layer portion 272.

A trench 280 and a trench 282 are then etched as depicted in FIGS. 20and 21. The trench 280 extends from the upper surface of the layerportion 276 to the upper surface of the gasket 262 which acts as an etchstop. The trench 282 extends from the upper surface of the layer portion276 to the upper surface of the gasket 268 which acts as an etch stop. Apassivation layer 284, which may be oxide, nitride, etc., is thendeposited on the upper surface of the layer portion 276 as depicted inFIGS. 22-23. The deposited passivation material also fills the trenches280 and 282 with passivation portions 286 and 288. The passivationportion 286, the gasket 262, and the trench nitride portion 250 thusform a spacer defining an out-of-plane electrode 290.

The passivation layer 284 is then etched to create openings 292 and 294.A metal layer may then be deposited on the passivation layer 284, andetched to create bond pads or traces, resulting in a configuration suchas the configuration of the pressure sensor 100 of FIG. 1. If desired,piezoresistors may also be deposited on the passivation layer 284.

The above described process may be modified in a number of ways toprovide additional features. By way of example, FIG. 24 depicts a wafer300 at about the same process step as the wafer 200 in FIG. 8. The wafer300 includes a handle layer 302, a buried oxide layer 304, a devicelayer 306, an oxide layer 308, and a lower middle cap layer portion 310.FIG. 24 further depicts electrode isolation trenches 312 and 314 whichare used to isolate an out-of plane electrode portion 316 from theremainder of the lower middle cap layer portion 310. The wafer 300further includes release stop trenches 318 and 320. The trenches 318 and320 are formed by etching through the oxide layer 308 after the trenches312 and 314 are formed. The trenches 318 and 320 are used to provide atime-independent cap footprint.

By way of example, FIG. 25 depicts the wafer 300 after release of thelower middle cap layer portion 310. In FIG. 25, a silicon rich nitridehas been deposited and etched to form release stop nitride portions 322and 324 and electrode isolation nitride portions 326 and 328.Additionally, vent holes 330 have been etched through the lower middlecap layer portion 310 and a portion of the oxide layer 308 has beenetched. The foregoing steps are accomplished substantially in the samemanner as similar steps described above with respect to FIGS. 10-17.

The primary difference between the wafer 200 and the wafer 300, however,is that the release stop nitride portions 322 and 324 formed in theoxide layer 308 function as an etch stop. Accordingly, once the etch ofthe oxide layer 308 reaches the release stop nitride portions 322 and324, no further etching of the oxide layer 308 occurs, even as theburied oxide layer 304 continues to be etched. Thus, while in the wafer200 the area of the oxide layer 222 which is etched to release the lowercap layer portion 228 from the device layer 206 is a function of thepositioning of the vent holes 274 (see FIGS. 16-17) and the etch stopring 227, the wafer 300 includes release stop nitride portions 322 and324 which provide a precise footprint for the released portion of thelower middle cap layer portion 310. In some embodiments, nitriderefilled etch stops are used along with silicon refilled etch stops(e.g., the etch stop ring 227) as lateral etch stops.

A further modification of the process described with reference to FIGS.2-23 is depicted in FIGS. 26-37. FIG. 26 depicts a wafer 350 at aboutthe same process step as the wafer 200 in FIG. 6. The wafer 350 includesa handle layer 352, a buried oxide layer 354, a device layer 356, and anoxide layer 358. The wafer 300 is modified to provide a substrateelectrical contact, however, by etching a trench 360 completely throughthe oxide layer 358, the device layer 356, and the buried oxide layer354. Then, formation of a lower cap layer portion 362 (see FIG. 27)further forms an epi-poly contact portion 364 which extends to thehandle layer 352. CMP may be performed on the lower cap layer portion362.

As depicted in FIG. 28, release stop trenches 366 and 368 are thenetched through the lower cap layer portion 362 and the oxide layer 358followed by etching of electrode isolation trenches 370 and 372 andcontact isolation trenches 374 and 376 (see FIG. 29). The isolationtrenches 370, 372, 374, and 376 extend only through the lower cap layerportion 362.

A low stress nitride is then used to fill the trenches 366, 368, 370,372, 374, and 376 with release stop nitride portions 378 and 380,electrode isolation nitride portions 382 and 384, and contact isolationportions 386 and 388 while a low stress nitride layer 390 is depositedon the upper surface of the lower cap layer portion 362 as shown in FIG.30. A thin oxide layer 392 is provided on the upper surface of the lowstress nitride layer 390 (FIG. 31). The thin oxide layer 392 and thenitride layer 390 are then patterned and etched resulting in theconfiguration of FIG. 32. FIG. 32 shows an electrode gasket 394, acontact gasket 396, and an etch stop gasket 398.

A thin epi-poly deposition layer 410 is then formed on the upper surfaceof the lower cap portion 362 and the upper surface of the gaskets 394,396, and 398 to form a middle cap layer portion 412. The middle caplayer portion 412 may be planarized if desired.

Referring to FIG. 34, after vent holes 414 are formed, an HF vapor etchrelease is performed which releases the middle cap layer portion 412from the in-plane-electrode 416. The etched portion of the oxide layer358 between the upper surface of the in-plane-electrode 416 and thelower surface of the middle cap layer portion 412 is constrained by therelease stop nitride portions 378 and 380. A clean high temperature sealis then performed in an epi reactor to seal the vent holes 414. Theresulting configuration is shown in FIG. 35 wherein a layer portion 418is formed above the middle cap layer portion 412.

A trench 420 and a trench 422 are then etched as depicted in FIG. 36.The trench 420 extends from the upper surface of the layer portion 418to the upper surface of the gasket 394 which acts as an etch stop. Thetrench 422 extends from the upper surface of the layer portion 418 tothe upper surface of the gasket 396 which acts as an etch stop. Apassivation layer 424, which may be oxide, nitride, etc., is thendeposited on the upper surface of the layer portion 418 as depicted inFIG. 37. The passivation layer 418 is etched to create an out-of-planeelectrode opening (not shown) and an opening 426. A metal layer may thenbe deposited on the passivation layer 424, and etched to create a bondpad or trace 428, as shown in FIG. 38. In FIG. 38, the bond pad 428 isin electrical communication with the handle layer 352 through an epicolumn 430.

The various processes described above allow for a variety of devices tobe made simultaneously on the same substrate. By way of example, FIG. 39depicts a sensor device 450 that includes a handle layer 452, a buriedoxide layer 454, a device layer 456, an oxide layer 458, a cap layer460, and a passivation layer 462. The sensor device 450 further includesan electrode isolation portion 464, contact isolation portions 466, andrelease or etch stop nitride portions 468. Thus, the same sequencedescribed above may be used to form the sensor device 450

The sensor device 450, although made using the same process as, forexample, the pressure sensor 100 of FIG. 1, is different from theembodiments described above. For example, the device 450 includes twopads 470 and 472 which provide for electrical communication with thedevice layer 456. Thus, in-plane movement of a proof mass 474 may bedetected. An optional third pad 476 may be provided if an out-of-planeelectrode 478 is desired. Another difference in the sensor device 450 isthat the electrode isolation nitride portions 464 include an extendedapron 480.

By adding an interim step to the foregoing process, the accelerometer490 of FIG. 40 may be simultaneously fabricated along with the abovedescribed devices. The accelerometer 490 differs from the sensor device450 of FIG. 39 in that a release or etch stop nitride portion 492 isincluded to more precisely control the amount of etching within a buriedoxide layer 494.

A process for forming a sensor such as the accelerometer 490 isdiscussed with reference to FIGS. 41-62. Referring initially to FIG. 41,an SOI wafer 500 including a handle layer 502, a buried oxide layer 504,and a device layer 506 is initially covered with an oxide layer 508.Next, a photoresist layer 510 is provided on the upper surface of theoxide layer 508 (FIG. 42). The wafer 500 is then etched to form etchstop trenches 512 through the photoresist layer 510, the oxide layer508, and the device layer 506. As shown in FIG. 43, the trenches 512 arethen extended through the buried oxide layer 504 to the upper surface ofthe handle layer 502. A plasma containing oxygen may be used to oxidize(“ash”) the photoresist layer 510.

As shown in FIG. 44, a nitride layer 514 is then deposited on the uppersurface of the oxide layer 508. Nitride deposition further results infilling the trenches 512 with nitride etch stop columns 516. The nitridelayer 514 is then etched using the oxide layer 508 as an etch stopresulting in the configuration of FIG. 45, followed by etching of theoxide layer 508 using the silicon device layer 506 as an etch stopresulting in the configuration of FIG. 46.

Next, as shown in FIG. 47, structure defining trenches 518 are etchedthrough the device layer 506. The trenches 518 define device layercontact portions 520 and 522 along with a proof mass 524. Sacrificialetch holes 526 are etched into the proof mass 524 as shown in FIG. 48.Referring to FIG. 49, a conformal oxide layer 530 is then deposited onthe upper surface of the device layer 506. The deposition of conformaloxide also fills the trenches 518 and the etch holes 526. Openings 532and 534 (see FIG. 50) are then etched through the oxide layer 530 toexpose the device layer contact portions 520 and 522.

An epi-poly deposition fills the contact openings 532 and 534 with lowermiddle contact portions 536 and 538 of epi-poly while depositing a lowercap layer portion 540 above the oxide layer 530 as shown in FIG. 51. CMPmay be performed on the lower cap layer portion 540. Next, as shown inFIG. 52, etch stop trenches 542 are formed through the lower cap layerportion 540 and the oxide layer 530. If desired, out-of-plane electrodetrenches 544 may be formed through the lower cap layer portion 540 (seeFIG. 53).

A low stress nitride is then used to fill the trenches 542 and 544 withtrench nitride portions 546 and 548 while a low stress nitride layer 550is deposited on the upper surface of the lower cap layer portion 540 asshown in FIG. 54. The nitride portions 546 form an etch stop for a lateretch. A thin oxide layer 552 is provided on the upper surface of the lowstress nitride layer 550. The thin oxide layer 552, which will be usedas an etch stop, and the nitride layer 550 are then patterned and etchedresulting in the gasket 554 of FIG. 56.

A thin epi-poly deposition layer 560 is then formed on the upper surfaceof the lower cap portion 540 and the upper surface of the gasket 554 toform a middle cap layer portion 562 (see FIG. 57). The middle cap layerportion 562 may be planarized if desired.

Referring to FIGS. 58 and 59, after vent holes 564 are formed, an HFvapor etch release is performed which releases the middle cap layerportion 562 from the proof mass 524. Horizontal etching of the oxidelayer 530 is limited by the etch stop nitride portions 546. Thesacrificial etch holes 526 allow the etch to release the proof mass 524from the handle layer 502 by etching the buried oxide layer 504.Horizontal etching of the buried oxide layer 534 is limited by the etchstop nitride columns 516.

A clean high temperature seal is then performed in an epi reactor toseal the vent holes 564. The resulting configuration is shown in FIG. 60wherein a layer portion 566 is formed above the middle cap layer portion562.

Trenches 568 and trenches 570 are then etched as depicted in FIG. 61.The trenches 570 extend from the upper surface of the layer portion 566to the upper surface of the gasket 554, the oxide layer portion of whichacts as an etch stop. The trenches 568 extend from the upper surface ofthe layer portion 566 to the upper surface of the oxide layer 530 whichacts as an etch stop. A passivation layer 572, which may be oxide,nitride, etc., is then deposited on the upper surface of the layerportion 566 as depicted in FIG. 62. The passivation layer 572 is etchedto create openings 574 and 576, and optionally 578. A metal layer maythen be deposited on the passivation layer 572, and etched to createbond pads or traces, resulting in a configuration such as theconfiguration of the accelerometer 490 of FIG. 40.

The above described procedure and variations thereof allow forresonators, inertial sensors, and other such devices to be packaged atthe wafer level while incorporating an electrically isolated,out-of-plane electrode into a thin-film cap. Other sensors which may befabricated in accordance with principles discussed above include siliconcap pressure sensors.

The etch stop ring 227 provides the ability to use a different materialthan the nitride etch stops. Rather than providing a lateral etch stopusing a film such as silicon nitride, relocating an etch stop ring toadditional locations (desired membrane perimeter) provides an improvedetch stop material with regard to the etch selectivity, continuation ofmaterial properties (silicon-silicon-silicon vs.silicon-nitride-silicon), and mechanical discontinuities. Incorporationof an etch stop ring also allows for a simpler process compared tonitride etch stops. The etch stop ring further provides excellentelectrical contact between the upper and lower layers.

The etch stop ring described above allows material which was previouslyused as a point of electrical contact to also serve as a lateral etchstop and material continuation of the two layers. The material for theetch stop ring in some embodiments is the same material as the lowerlayer and first cap layer. In some embodiments, the etch stop ring isformed as epi-polysilicon (grown from single crystal or polycrystallinesilicon) while in other embodiments the etch stop ring is polysilicon(LPCVD, PECVD, or other).

The above described etch stop ring can be used to provide a singleperimeter etch stop. In some embodiments, a series of etch stop portionsare incorporated to improve the mechanical connection between layers(concentric full or partial circles for example). If desired, one ormore vacuum chambers can be formed between the etch stop rings. Indifferent embodiments, the width of the etch stop feature (ring, partialring, or line) ranges from 1 μm wide to several 10's of microns wide.

While the invention has been illustrated and described in detail in thedrawings and foregoing description, the same should be considered asillustrative and not restrictive in character. It is understood thatonly the preferred embodiments have been presented and that all changes,modifications and further applications that come within the spirit ofthe invention are desired to be protected.

1. A method of forming an out-of-plane electrode, comprising: forming anoxide layer above an upper surface of a device layer; etching an etchstop perimeter defining trench extending through the oxide layer;forming a first cap layer portion on an upper surface of the oxide layerand within the etch stop perimeter defining trench; etching a firstelectrode perimeter defining trench extending through the first caplayer portion and stopping at the oxide layer; depositing a firstmaterial portion within the first electrode perimeter defining trench;depositing a second cap layer portion above the deposited first materialportion; and vapor releasing a portion of the oxide layer with the etchstop portion providing a lateral etch stop.
 2. The method of claim 1,further comprising: depositing a third cap layer portion above thesecond cap layer portion after vapor releasing the portion of the oxidelayer; etching a second electrode perimeter defining trench extendingthrough the second cap layer portion and the third cap layer portion;and depositing a second material portion within the second electrodeperimeter defining trench, such that a spacer including the firstmaterial portion and the second material portion define a perimeter ofan out-of-plane electrode.
 3. The method of claim 2, further comprising:depositing an etch stop layer portion on the deposited first materialportion, wherein etching a second electrode perimeter defining trenchcomprises: etching a second electrode perimeter defining trenchextending through the second cap layer portion and to the etch stoplayer.
 4. The method of claim 2, wherein the first cap layer portion,the second cap layer portion, and the third cap layer portion aredeposited by an epitaxial deposition process.
 5. The method of claim 2,wherein the first material portion and the second material portioncomprise silicon nitride.
 6. The method of claim 2, further comprising:depositing an etch stop layer portion on the deposited first materialportion, wherein etching a second electrode perimeter defining trenchcomprises: etching a second electrode perimeter defining trenchextending through the second cap layer portion and to the etch stoplayer.
 7. The method of claim 2, further comprising; etching vent holesthrough the first cap layer and the second cap layer, wherein vaporreleasing a portion of the oxide layer comprises: vapor releasing aportion of the oxide layer through the vent holes.
 8. A device with anout-of-plane electrode comprising: a device layer positioned above ahandle layer; a first electrode defined within the device layer; a caplayer having a first cap layer portion spaced apart from an uppersurface of the device layer by a gap, and having an etch stop perimeterdefining portion defining a lateral edge of the gap; and an out-of-planeelectrode defined within the first cap layer portion by a spacer.
 9. Thedevice of claim 8, wherein the spacer comprises: a first silicon nitrideportion extending upwardly from a lower surface of the cap layer; asecond silicon nitride portion extending downwardly from an uppersurface of the cap layer; and an etch stop portion located between thefirst silicon nitride portion and the second silicon nitride portion.10. The device of claim 9, further comprising: a buried oxide layerportion located between a lower surface of the device layer and an uppersurface of a handle layer; and an etch stop extending downwardly fromthe upper surface of the device layer and defining a boundary of theburied oxide layer portion.
 11. A method of forming an out-of-planeelectrode comprising: providing an oxide layer above an upper surface ofa device layer; etching an etch stop defining trench extending throughthe oxide layer; epitaxially depositing a first cap layer portion abovean upper surface of the oxide layer and an etch stop cap layer portionwithin the etch stop defining trench; etching a first electrodeperimeter defining trench extending through the first cap layer portionand stopping at the oxide layer; depositing a first insulating materialportion within the first electrode perimeter defining trench; andperforming an HF vapor etch release on a portion of the oxide layer withthe etch stop cap layer portion providing a lateral etch stop.
 12. Themethod of claim 11, further comprising: epitaxially depositing a secondcap layer portion above the deposited first material portion;epitaxially depositing a third cap layer portion above the second caplayer portion after performing the HF vapor etch release; etching asecond electrode perimeter defining trench extending through the secondcap layer portion and the third cap layer portion; and depositing asecond insulating material portion within the second electrode perimeterdefining trench, such that a spacer including the first material portionand the second material portion define a perimeter of an out-of-planeelectrode.
 13. The method of claim 12, further comprising: depositing anetch stop layer portion on the deposited first insulating materialportion, wherein etching a second electrode perimeter defining trenchcomprises: etching a second electrode perimeter defining trenchextending through the second cap layer portion and to the etch stoplayer.
 14. The method of claim 13, wherein the first insulating materialportion and the second insulating material portion comprise siliconnitride.
 15. The method of claim 13, further comprising: depositing anetch stop layer portion on the deposited first material portion, whereinetching a second electrode perimeter defining trench comprises: etchinga second electrode perimeter defining trench extending through thesecond cap layer portion and to the etch stop layer.
 16. The method ofclaim 13, further comprising; etching vent holes through the first caplayer and the second cap layer, wherein performing an HF vapor etchrelease on a portion of the oxide layer comprises: performing an HFvapor etch release on a portion of the oxide layer through the ventholes.